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sublime silicon carbide in malta

of the quantum Hall effect of graphene on Silicon Carbide

Robustness of the quantum Hall effect of graphene on Silicon Carbide on Physics of 2D Crystals (ICP2C3), May 2018, La Valletta, Malta

Growth of silicon carbide on silicon via reaction of sublimed

200982-Growth of silicon carbide on silicon via reaction of sublimed fullerenes and siliconHumansFibroblast Growth Factor 1Crystallography, X-Ray

Silicon carbide formation by alternating pulses

A method of forming silicon carbide wherein silicon and carbon precursors are successively pulsed into a reactor in the gas phase. The precursors react to

Silicon carbide/diamond heterostructure rectifying contacts

M. Malta, and K. Das, Silicon carbide/diamond heterostructure rectifying contacts, Electronics Letters, vol. 29, pp. 1332-1334, 1993

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INSULATING RESISTIVITY IN HIGH PURITY SILICON CARBIDE

The invention includes the steps of heating a silicon carbide crystal havingMALTA, David, PhillipHOBGOOD, Hudson, McDonaldMUELLER, Stephan, Georg

Recent Advances in Silicon Carbide Crystal and Substrate

Recent Advances in Silicon Carbide Crystal and Substrate TechnologyD. P. MaltaM. F. BradyM. R. CalusJ. J. SumakerisInternational

resistivity in high purity silicon carbide

2007110-A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level t

Growth of ultra-high purity silicon carbide crystals in an

at which second temperature sublimed species from continuing to heat the silicon carbide source Malta, David PhillipJenny, Jason RonaldHobgood,

single polytype single crystal silicon carbide wafer,

single polytype single crystal silicon carbide wafer, diameter greater than 3David Phillip MaltaHudson McDonald HobgoodStephan Georg MUELLER

Growth and Characterization of Semiconductor Silicon Carbide

Growth and Characterization of Semiconductor Silicon Carbide for Electronic and D. MaltaSt.G. MüllerH.McD.Hobgooda,,M.Bradya,,W.Brixius,et al

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Method and apparatus for producing silicon carbide crystals

Growth of silicon carbide crystalline material on the first growth surface inDavid Phillip MaltaValeri F. Tsvetkov

One hundred millimeter single crystal silicon carbide

201243-A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separati

Silicon Carbide Market Is Predicted To Reach $4.48 Billion By

2-The global silicon carbide market size is expected to reach USD 4.48 Nagarro sets up technical center in Malta to focus on growing iGam

Method for producing silicon carbide semiconductor device

20021220-(a) silicon carbide substrate is oxidized by a low temperature oxidation as a cap material so that Si in the SiC substrate is not sublim

for the production of silicon carbide crystals

200714-(Durham, NC, US) Malta, David P. (Raleigh, said silicon carbide seed crystal having a firstsublimes or vaporizes, and the vaporized m

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