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6h silicon carbide in turkmenistan

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Micropipe-induced birefringence in 6H silicon carbide

The micropipe-induced birefringence of 6H silicon carbide (SiC) is measured and quantitatively modelled. A good agreement can be obtained between theory and

Deep level defects in 6H silicon carbide

We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic

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Micropipe-induced birefringence in 6H silicon carbide

The micropipe-induced birefringence of 6H silicon carbide (SiC) is measured and quantitatively modelled. A good agreement can be obtained between theory and

Dynamic charge storage in 6H silicon carbide

pn﹋unction storage capacitors have been fabricated in 6H silicon carbide. The charge decay is dominated by surface generation at the mesa edges, and the

Observation of negative-U centers in 6H silicon carbide

Observation of negative-U centers in 6H silicon carbidedeep level transient spectroscopyenergy gapimpurity statessilicon compoundswide band gap semiconductors

Deep level defects in 6H silicon carbide

We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic

Observation of negative-U centers in 6H silicon carbide

Observation of negative-U centers in 6H silicon carbidedeep level transient spectroscopyenergy gapimpurity statessilicon compoundswide band gap semiconductors

Dynamic charge storage in 6H silicon carbide

pn﹋unction storage capacitors have been fabricated in 6H silicon carbide. The charge decay is dominated by surface generation at the mesa edges, and the

Optical defects in ion damaged 6H-silicon carbide

Optical defects in ion damaged 6H-silicon carbideion-beam-mixingelectronic structurevalence bandcharge transferXPSXANESDamage production induced in 6H-SiC sin

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Optical defects in ion damaged 6H-silicon carbide

Optical defects in ion damaged 6H-silicon carbideion-beam-mixingelectronic structurevalence bandcharge transferXPSXANESDamage production induced in 6H-SiC sin