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Home Productswhich are silicon carbide transistors features

which are silicon carbide transistors features

FIELD EFFECT SILICON CARBIDE TRANSISTOR - Patent application

FIELD EFFECT SILICON CARBIDE TRANSISTOR Inventors: Toshiyuki Mine (Tokyo, JP) Yasuhiro Shimamoto (Tokyo, JP) Hirotaka Hamamura (

Method of fabricating silicon carbide field effect transistor

Method of fabricating silicon carbide field effect transistorShow full item record Title: Method of fabricating silicon carbide field effect transistor Date:

a C2M0025120D silicon carbide-based power MOSFET transistor

Transistors View More Wafer View More Latest News View More Company Noticesilicon carbide which are widely used in the automotive, telecommunications,

GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors

20141027-GeneSiC Releases 25 mOhm/1700 V Silicon Carbide TransistorsSiC switches offering lowest conduction losses and superior short circuit capabil

Silicon carbide microwave field-effect transistor: Effect of

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Junction Bipolar Silicon Carbide Transistor - Detailed

2013103-Silicon Carbide Transistor - Detailed Reverse The Super Junction Transistors SiC are GeneSIC transistor has several new features

nitride transistors fabricated on cubic silicon carbide on

Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [

for creating transistors from graphene and silicon carbide

A technology for creating transistors from graphene and silicon carbide - The miniaturization of silicon technology over the years become increasingly complex

US Patent for Silicon carbide static induction transistor and

A static induction transistor is formed on a silicon carbide substrate doped with a first conductivity type. First recessed regions in a top surface of

of power bipolar junction transistors in Silicon carbide (

Get this from a library! SPICE Modeling and device simulation of power bipolar junction transistors in Silicon carbide. [J Manel Díaz Martos; M

BD140 - PNP SILICON TRANSISTORS - STMicroelectronics

TRANSISTORS AND METHODS OF FABRICATING SILICON CARBIDE METAL-SEMICONDUCTOR FIELDthe disclosures of which are hereby incorporated herein by reference as if

Semelab | Silicon Carbide Diodes | Power Bipolar Transistors

(External) Silicon Carbide Power Brochure | PDF transistors achieves unprecedented levels of power and added new thermal and assembly features

and High-reliability Silicon Carbide Transistor with AlON

20121211-Development of Low-energy-loss and High-reliability Silicon Carbide Transistor with AlON High-k Gate Dielectric --Contributes to Realizing A

of a Silicon Carbide Bipolar Junction Transistor Measured

AbeBooks.com: Junction-to-Case Thermal Resistance of a Silicon Carbide Bipolar Junction Transistor Measured (9781287235521) by Janis M. Niedra and a great

Silicon Carbide / Epitaxial Graphene Transistors and

Silicon Carbide / Epitaxial Graphene Transistors and Integrated Circuits26.09.2013The invention describes SiC/Graphene Transistors for Normally-On/

US Patent for Silicon carbide static induction transistor and

A static induction transistor is formed on a silicon carbide substrate doped with a first conductivity type. First recessed regions in a top surface of

Semelab | Silicon Carbide Diodes | Power Bipolar Transistors

Semelab are always striving to bring you the latest technologies which provideFeatures Semelabs Silicon Carbide (SiC) Schottky diodes exhibit low forward

Silicon carbide and related wide-bandgap transistors on semi

Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy United States Patent 7821015 Abstract: A method of making a semi-insulating

Silicon carbide power field effect transistor - Patent #

The invention provides for a field effect transistor (FET) which includes a substrate and a buffer layer formed upon the substrate and an active layer

SiC Wafer,GaN Wafer,GaAs Wafer,Germanium Wafer,Epi Wafer,

PAM-XIAMEN produces wide range Compound Semiconductor Wafer substrate: Silicon Carbide Wafer,Gallium Nitride Wafer and epi wafer,GaAs Wafer and epitaxial wafe

Silicon Carbide Static Induction Transistor And Process For

A static induction transistor is formed on a silicon carbide substrate doped with a first conductivity type. First recessed regions in a top surface of

Silicon-Carbide Power Transistors - IEEE Journals Magazine

An experimental analysis of the behavior under short-circuit conditions of three different silicon-carbide (SiC) 1200-V power devices is presented. It is

SiC (Silicon Carbide Junction Transistor) - GeneSiC

Browse DigiKeys inventory of SiC (Silicon Carbide Junction Transistor)SiC (Silicon Carbide Junction Transistor). Features, Specifications, Alternative Produc

COMPONENTS: Silicon carbide transistor for UHF pulse radar

201091-The Microsemi Corp. RF Integrated Solutions (RFIS) segment in Sunnyvale, Calif., is introducing the model 0405SC-2200M silicon carbide (SiC)

40mΩ silicon carbide transistor switches 1,200V and 50A

2018524-New Jersey-based UnitedSiC has introduced a 40mΩ silicon carbide Unusually for SIC transistors, the gate is fully compatible with

and SPICE Models for Silicon Carbide Junction Transistors

Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released. Gate Driver Board optimized for high switching speeds and